METHOD OF EXAMINING DEFECTS, WAFER SUBJECTED TO DEFECT EXAMINATION OR SEMICONDUCTOR ELEMENT MANUFACTURED USING THE WAFER, QUALITY CONTROL METHOD FOR WAFER OR SEMICONDUCTOR ELEMENT, AND DEFECT EXAMINING DEVICE

摘要

Light emitted from a light source device (7) is polarized by a polarizer (8) and obliquely enters an object (W) to be examined, the scattered light thereof is imaged by a CCD imager (10) which is provided in a dark field and has a beam displacing element (12), and the polarization component light intensity for the obtained P polarization component image and S polarization component image, and a polarization direction, as a ratio of these intensities, are obtained. Defects are detected and classified by finding the polarization component light intensity and the polarization direction from images captured from imaging in a state wherein no stress is applied to the object and in a state wherein a static load is added to the object so as to apply a static stress which becomes a tensile stress on the surface of the object that faces the light emission, then comparing the resulting polarization component light intensity and polarization direction with predetermined threshold values. Defects in the object, such as internal precipitates, cavity defects, foreign matter or scratches on the surface, and cracks on the surface layer, are precisely detected, and the type of each defect is identified, whereby the defects can be classified. By examining for defects and carrying out quality control for wafers to be used in the fabrication of semiconductor elements, the number of defective products can be reduced dramatically.