| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming nickel silicide which can reduce the number of processes for forming nickel silicide capable of being used for various purposes in the semiconductor and advanced packaging technology such as formation of gate electrodes, ohmic contacts, interconnection lines, Schottky barrier diode contacts, photovoltaics, solar cells and optoelectronic components. SOLUTION: The method of forming nickel silicide comprises: a step of depositing nickel onto a silicon-containing substrate; a step of depositing a protective layer onto the nickel; and a step of heating the combination up to a temperature sufficient for forming nickel silicide. The formation of the nickel silicide is performed in an oxygen-containing environment. COPYRIGHT: (C)2011,JPO&INPIT |
