| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device securing a data retention period on a data-by-data basis. SOLUTION: A memory device 10 has: a plurality of blocks each having a function to store data, wherein stored data retention period is shortened according to the number of data rewrite times; and a wear leveling means 12 for performing wear leveling to level the number of data rewrite times for each of the plurality of blocks. The memory device 10 further has a block group dividing means 12 for dividing the memory means 10 into a plurality of block groups. The wear leveling means 12 performs wear leveling in a range of each divided block group. Preferably, the block group dividing means 12 allocates each block group for use on an application-by-application basis. COPYRIGHT: (C)2011,JPO&INPIT |
