| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of rear surface roughness of a semiconductor wafer for evaluating rear surface roughness easily. SOLUTION: The evaluation method includes: glossiness acquiring processes (A10-A30) for acquiring glossiness measured at a specific incident angle which reflects power spectrum density of an irregular component belonging to a specific wavelength region out of irregular components of a rear surface of the etched semiconductor wafer; and an evaluation process (A40) for evaluating roughness of a wafer rear surface by determining whether the glossiness is in an allowable range or not. At that time, power spectrum density of the irregular component belonging to the specific wavelength region is power spectrum density correlating to a leak amount of inert gas supplied as a heat exchange medium between the wafer rear surface and an attraction surface of an electrostatic chuck plate. The allowable range correlates with a range of the leak amount. COPYRIGHT: (C)2011,JPO&INPIT
|
