METHOD FOR PRODUCING STACKS ON A PLURALITY OF LEVELS OF SILICON CHIP ASSEMBLIES

摘要

The invention relates to a microelectronic device provided with at least one given level comprising a plurality of chips (C1,...,Cn) stacked on another plurality of chips (C' 1,..., C' n) of a lower level; the method includes steps of: producing a first plurality of chips on a first plate (100), electrically testing the chips (C1,..., Cn) of the first plurality of chips so as to locate one or more defective chip(s) (C2) on the first plate, attaching a temporary substrate (101-102) to the first plurality of chips, separating the chips from one another by forming trenches (120) around the chips, which pass through the first plate and expose the temporary substrate, removing said defective chip(s), assembling the first plurality of chips to a second plurality of chips (C' 1,..., C' n) resting on a second plate (200).