VERFAHREN ZUR BESTIMMUNG UNTER WELCHEN KONDITIONEN DER SILIZIUMEINKRISTALL HERGESTELLT WURDE UND VERFAHREN ZUR HERSTELLUNG DES SILIZIUMWAFERS,申请号DE20016044416-传众专利搜索

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发明名称	VERFAHREN ZUR BESTIMMUNG UNTER WELCHEN KONDITIONEN DER SILIZIUMEINKRISTALL HERGESTELLT WURDE UND VERFAHREN ZUR HERSTELLUNG DES SILIZIUMWAFERS
摘要
申请公布号	DE60144416(D1)	申请公布日期	2011.05.26
申请号	DE20016044416	申请日期	2001.01.18
申请人	SHIN-ETSU HANDOTAI CO. LTD.	发明人	IIDA, MAKOTO;KIMURA, MASANORI
分类号	C30B29/06;C30B15/00;C30B15/20;G01N21/956;G01N27/04;G01N33/00;H01L21/322;H01L21/324;H01L21/66	主分类号	C30B29/06
代理机构		代理人
主权项
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