SOURCE/DRAIN ENGINEERING OF DEVICES WITH HIGH-MOBILITY CHANNELS

摘要

PROBLEM TO BE SOLVED: To provide a source/drain engineering of devices with high-mobility channels. SOLUTION: An integrated circuit structure includes a substrate, and a channel over the substrate. The channel includes a first III-V compound semiconductor material formed of group III and group V elements. A gate structure is over the channel. A source/drain region is adjacent to the channel and includes a group-IV region formed of a doped group-IV semiconductor material selected from the group consisting essentially of silicon, germanium, and combinations thereof. COPYRIGHT: (C)2011,JPO&INPIT