发明名称 EXPOSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND EXPOSURE APPARATUS
摘要 According to one embodiment, on a substrate, a resist layer is laminated on an upper side of a pattern formation layer on which a desired pattern is formed. A diffraction pattern that diffracts exposure light irradiated on the substrate is formed further on the upper side than the resist layer. Overall exposure is performed from above the diffraction pattern using a deformed light having illumination light source shape determined according to the desired pattern. Diffracted light diffracted on the resist layer.
申请公布号 US2011122390(A1) 申请公布日期 2011.05.26
申请号 US20100952835 申请日期 2010.11.23
申请人 TAKAHASHI MASANORI;SATO TAKASHI;TANAKA SATOSHI;INOUE SOICHI;TAKAKI TAKAMASA 发明人 TAKAHASHI MASANORI;SATO TAKASHI;TANAKA SATOSHI;INOUE SOICHI;TAKAKI TAKAMASA
分类号 G03B27/72;G03F7/20 主分类号 G03B27/72
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