发明名称 |
Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions |
摘要 |
A novel integration scheme for forming power MOSFET, particularly forming salicides for both gate and mesa contact regions, as well as using multiple energy contact implants through the salicided layer to form conductive body contacts which short to the source region by the salicides.
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申请公布号 |
US2011124167(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US20100927177 |
申请日期 |
2010.11.08 |
申请人 |
HU YONGZHONG;TAI SUNG-SHAN |
发明人 |
HU YONGZHONG;TAI SUNG-SHAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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