| 摘要 |
Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation-absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C. to about 1100° C., wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment.
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