| 摘要 |
The invention relates to design, growing and processing photovoltaic solar cells in several layers of AIGaInAsSb materials on a substrate. The invention also relates to multi-functional solar cell assembled by at least three layers of IIl-V materials, where at least two layers of the IM-V materials are doped with Te, Se, B or Si. At least one layer is preferably of the penternary material AIGaInAsSb and the substrate of Si. Further, described is a concentrator system so that the solar cell receives primary radiation (direct radiation from the sun) or secondary radiation (radiation from an object being heated). |
