发明名称 |
PLASMA GENERATOR AND FILM FORMING DEVICE, ETCHING DEVICE, SURFACE TREATMENT DEVICE, AND ION IMPLANTATION DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma generator capable of generating lengthy line plasmas with uniformity and a high density; and to provide a film forming device capable of forming film on a large area substrate, an etching device, a surface treatment device, and an ion implantation device, by utilizing the above plasma generator. <P>SOLUTION: The electron cyclotron resonance line plasma generator includes: a microwave generating source for generating microwaves; a waveguide in which the microwaves generated from the microwave generating source are introduced and which has slits extending in a propagation direction of the microwaves; a chamber to which a plasma generating gas to be made plasmas by microwaves leaking out from the slits through a dielectric window is supplied; and a magnetic field-generating mechanism which applies a magnetic field on the plasma to generate an electron cyclotron resonance in the chamber. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011103257(A) |
申请公布日期 |
2011.05.26 |
申请号 |
JP20090258405 |
申请日期 |
2009.11.11 |
申请人 |
KOCHI UNIV OF TECHNOLOGY |
发明人 |
HIRAO TAKASHI;SHINDO HARUO;FURUTA MAMORU;HIRAMATSU TAKAHIRO |
分类号 |
H05H1/46;C23C14/46;C23C14/48;C23C16/511;H01L21/203;H01L21/205;H01L21/265;H01L21/3065;H01L21/31 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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