| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile memory cell of which the output logic reading data dose not become indefinite while the data are not written (the state right after manufacturing). <P>SOLUTION: The semiconductor non-volatile memory circuit is configured to integrate a transistor pair which is formed by making a first transistor N1 and a second transistor N2 having higher on-current than that of the first transistor N1 a pair, as the memory cell CEL for storing one-bit data. In the memory cell, a state where on-current of the second transistor N2 is higher than that of the first transistor N1 is made a memory state of data "0", and conversely, a state where on-current of the second transistor N2 is lower than that of the first transistor N1 is made a memory state of data "1". <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
