| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film on a base material by chemical vapor deposition of a silane oxide precursor at a relatively low temperature. SOLUTION: A method for forming a silicon oxide film on a base material through chemical vapor deposition of a silane oxide precursor by a reaction with an oxidizing agent includes the use of an aminosilane precursor represented by the following formulas: PR1NSiH3 (formula A); RN(SiH3)2 (formula B); and SiH3RN(R2)NR1SiH3 (formula C). In the formulas, R and R1 are selected from the group consisting of a linear, branched, or cyclic, saturated or unsaturated C2-C10 alkyl group, an aromatic, and an alkylamino group. In formula A and formula C, R and R1 can also be formed into a cyclic group (CH2)n, (wherein n is 1-6, preferably 4 or 5), and R2 represents a single bond, a (CH2)n chain, a ring, SiR2, or SiH2. COPYRIGHT: (C)2011,JPO&INPIT |
