发明名称 BONDING WIRE FOR SEMICONDUCTOR
摘要 It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.
申请公布号 US2011120594(A1) 申请公布日期 2011.05.26
申请号 US20100993401 申请日期 2010.02.12
申请人 NIPPON STEEL MATERIALS CO., LTD.;NIPPON MICROMETAL CORPORATION 发明人 UNO TOMOHIRO;TERASHIMA SHINICHI;YAMADA TAKASHI;OISHI RYO;ODA DAIZO
分类号 B23K35/12;B23K35/24 主分类号 B23K35/12
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