| 摘要 |
Disclosed is a method for measuring a profile using a device for measuring the profile in which included are: a distance measuring means 2 for measuring the distance to an edge region of a semiconductor wafer 12 in such a manner that light is emitted to be reflected at the edge region and to be detected; a first swing mechanism swingably supporting the distance measuring means 2; and a second swing mechanism swingably supporting the first swing mechanism, the method comprising the steps of: locating angles of the first swing mechanism each of which gives a maximum intensity of received light at each of predetermined angles of the second swing mechanism thereof; calculating contour points using coordinate transformation, thereby enabling points-related data to be acquired to represent a contour profile of the edge region. Thus, the method can be used for edge profile measurement of large-diameter wafers.
|
