III-V LIGHT EMITTING DEVICE WITH THIN N-TYPE REGION

摘要

A device includes a semiconductor structure comprising a Ill-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.