SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is a semiconductor element (100) provided with: a silicon carbide layer (102) that is disposed on a principal surface of a substrate (101) and has a first-conductivity-type body region (105) and a second-conductivity-type drift region (107); a second-conductivity-type channel layer (115) that is disposed on the surface of the silicon carbide layer (102), on top of the body region (105) and the drift region (107), and comprises silicon carbide; a gate insulation layer (111) disposed on the channel layer (115); a gate electrode (113) that is insulated from the silicon carbide layer (102) by the gate insulation layer (111); a source electrode (116) provided on the silicon carbide layer (102); and a drain electrode (114) provided on the back surface of the substrate (101). The source electrode (116) is in contact with the body region (105) and the channel layer (115). The concentration of second-conductivity-type impurities in the surface of the silicon carbide layer (102) in contact with the source electrode (116) is less than or equal to the concentration of second-conductivity-type impurities in the channel layer (115). This yields a low-loss silicon carbide semiconductor element with excellent switching characteristics.