| 摘要 |
<p>PURPOSE: A method for forming a contact hole of a semiconductor device is provided to form a micro contact hole using only one mask, thereby easily forming a micro contact hole while simplifying processing processes. CONSTITUTION: A hard mask layer(114) and a photosensitive pattern(116) defining a first contact hole area are formed on a layer to be etched. A spacer(120) is formed on a sidewall of the photosensitive pattern. The photosensitive pattern is eliminated. The hard mask layer is etched by the spacer as an etching mask to form a hard mask pattern. The layer to be etched is etched by the hard mask pattern as an etching mask to form a target contact hole.</p> |
