| 摘要 |
<p>A method for manufacturing solid-state imaging device for collectively manufacturing a multiplicity of solid-state imaging devices at a wafer level, the method including: a step of reducing the thickness of a cover glass wafer (10) after providing a mask material (12) to the cover glass wafer (10) including frame-shaped spacers (5); a step of releasing the mask material (12) and laminating a first support wafer (14) through a lamination member (16); a step of positioning and bonding a silicon wafer (18) and the cover glass wafer (10), the silicon wafer (18) including a second support wafer (22) laminated on the back side through a lamination member (24); a step of dicing the cover glass wafer (10) into cover glasses (4) by a whetstone (26); and a step of dicing the silicon wafer (18) by a whetstone (28).</p> |
