METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a first single crystal semiconductor film on an insulating substrate and a second single crystal semiconductor film on the first single crystal semiconductor film.

SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: doping a first ion in a first single crystal semiconductor substrate to form a first embrittlement layer; doping a second ion in a second single crystal semiconductor substrate to form a second embrittlement layer; bonding the first single crystal semiconductor substrate and the second single crystal semiconductor substrate to each other; forming a first single crystal semiconductor film on the second single crystal semiconductor substrate by a first heat treatment; bonding an insulating substrate on the first single crystal semiconductor film; and forming the first single crystal semiconductor film and a second single crystal semiconductor film on the insulating substrate by a second heat treatment. In the method, the dose of the first ion is more than that of the second ion, and the temperature of the first heat treatment is lower than that of the second heat treatment.

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