| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. <P>SOLUTION: The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is ≤1×10<SP>-13</SP>A per 1 μm in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals. <P>COPYRIGHT: (C)2011,JPO&INPIT |
