| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a joining structure which is strong in a thermal stress and capable of securing a large junction area without generating sputter, and to provide a joining method. <P>SOLUTION: A joint part 20, in which wiring tape 18 is joined to a heat radiation block 14 equipped in a power semiconductor device 13, includes a diffusion joint area 30 in which the heat radiation block 14 and the wiring tape 18 are joined by a diffusion joint material 31a, and a melting joint area 40 in which the heat radiation block 14 and the wiring tape 18 are joined by melting, which is formed to enclose the diffusion joint area 30. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
