SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR

摘要

Provided is: a semiconductor light-emitting element comprising a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer, wherein the nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting element of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained, while the contact layer acts as a diffusion barrier layer and inhibits deterioration due to the heat generated in a nitrogen-atmosphere heat treatment and in high-temperature and high-current injection conditions and hence the thermal stability is outstanding.