发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer. |
申请公布号 |
WO2011062068(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
WO2010JP69652 |
申请日期 |
2010.10.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;KOYAMA, JUN;KATO, KIYOSHI |
发明人 |
YAMAZAKI, SHUNPEI;KOYAMA, JUN;KATO, KIYOSHI |
分类号 |
H01L21/8242;H01L21/8238;H01L21/8247;H01L27/08;H01L27/092;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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