发明名称 SEMICONDUCTOR DEVICE
摘要 It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer.
申请公布号 WO2011062068(A1) 申请公布日期 2011.05.26
申请号 WO2010JP69652 申请日期 2010.10.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;KOYAMA, JUN;KATO, KIYOSHI 发明人 YAMAZAKI, SHUNPEI;KOYAMA, JUN;KATO, KIYOSHI
分类号 H01L21/8242;H01L21/8238;H01L21/8247;H01L27/08;H01L27/092;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8242
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