发明名称 CMP POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a polishing agent and a polishing method allowing efficient and uniform polishing at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation. <P>SOLUTION: This invention relates to the CMP polishing agent containing cerium oxide particles, a dispersing agent, and a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011103498(A) 申请公布日期 2011.05.26
申请号 JP20110031168 申请日期 2011.02.16
申请人 HITACHI CHEM CO LTD 发明人 FUKAZAWA MASATO;KOYAMA NAOYUKI;KURATA YASUSHI;HAGA KOJI;AKUTSU TOSHIAKI;OTSUKI HIROTO
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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