| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a photomask blank capable of improving light resistance of a transfer mask against exposure light at a wavelength of 200 nm or less and improving a lifetime of a transfer mask. <P>SOLUTION: The method for producing a transfer mask is carried out by using a mask blank, which includes a thin film for pattern formation that is formed from a material containing silicon and a transition metal other than chromium, and a chromium thin film that is formed from a material containing chromium, successively layered on a light-transmitting substrate, and the method includes: a step of forming a resist pattern on the chromium thin film; a step of forming a pattern in the chromium thin film; a step of forming a pattern in the thin film for pattern formation by using the chromium thin film having the pattern as a mask; a step of removing the chromium thin film to prepare a transfer mask; and a cleaning step in which the thus-produced transfer mask is subjected to one or more cleaning processes selected from alkaline solution cleaning, hot water cleaning and ozone-containing water cleaning until the pattern width of the thin film for pattern formation is reduced by 4 nm or until the space width of the thin film for pattern formation is increased by 4 nm. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
