| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for reducing the rewriting current of a phase change memory. <P>SOLUTION: A resistive element R of a phase change memory has a laminated structure comprising a lower electrode 121, a piezoelectric material layer 122, a barrier layer 123, a memory layer 124, and upper electrode 125. The maximum temperature reached (phase change temperature from a phase to an α phase) of the phase change material is lowered to reduce the rewriting current by utilizing an electrostrictive effect of the piezoelectric material layer 122 to apply the compressive stress to the phase change material (the memory layer 124) during the operation of a memory cell MC. <P>COPYRIGHT: (C)2011,JPO&INPIT |
