METHOD FOR MAKING A BEAM JUNCTION, AND ELECTROMAGNETIC-RADIATION BEAM CONVERTER

摘要

The invention pertains to the field of semiconductors and more precisely relates to devices and arrangements for semiconductor junctions formed when contacting two semiconductors (a p-n junction when they have a different conductivity and heterojunction when they have a different chemical structure) or when contacting a semiconductor with a metal (Schottky junction), to methods for realizing the same, to electromagnetic-radiation converters, and to other semiconductor apparatuses containing such junctions. The method for making a beam junction on a semiconductor substrate comprises forming N>1 separate single-type junctions, connecting the same into a parallel circuit using current electrodes, wherein the volume of each single-type junction is selected so as to be smaller than the volume containing the most dangerous characteristic dominant defect in the semiconducting base. The construction thus obtained and the junction structure are resistant to the influence of chaotically distributed defects in the semiconductor substrate, and the presence of such defects does not alter the electric parameters of semiconductor apparatuses.