| 摘要 |
<p>A 3-level power conversion device is easily reduced in size and cost by reducing the inductance of the wiring between a semiconductor module and a DC power supply circuit constituting the 3-level power conversion device. When connecting between DC power supplies (electrolyte capacitors) (25, 26) for a 3-level inverter and IGBT modules (16 to 18), a wiring conductor in a bi-directional switching unit is divided on an identical plane into three conductors (35, 42, 43) or two conductors (35, 42), each of which is sandwiched by placing a P-conductor (33) and an N-conductor (37) outside with an insulator interposed therebetween to form a hermetic three-layer wiring structure. This reduces the wiring inductance even by a small number of stacked layers, so that the size and cost of the entire device is reduced.</p> |
