发明名称 |
HIGH-K/METAL GATE TRANSISTOR |
摘要 |
<p>A transistor includes a silicon layer with a source region and a drain region, a gate stack disposed on the silicon layer between the source region and the drain region, an L shaped gate encapsulation layer disposed on sidewalls of the gate stack, and a spacer disposed above the horizontal portion of the gate encapsulation layer and adjacent to the vertical portion of the gate encapsulation layer. The gate stack has a first layer of high dielectric constant material, a second layer comprising a metal or metal alloy, and a third layer comprising silicon or polysilicon. The gate encapsulation layer has a vertical portion covering the sidewalls of the first, second, and third layers of the gate stack and a horizontal portion covering a portion of the silicon layer that is adjacent to the gate stack.</p> |
申请公布号 |
WO2011060972(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
WO2010EP62109 |
申请日期 |
2010.08.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;SLEIGHT, JEFFREY;NARAYANAN, VIJAY;MO, RENEE;NATZLE, WESLEY |
发明人 |
SLEIGHT, JEFFREY;NARAYANAN, VIJAY;MO, RENEE;NATZLE, WESLEY |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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