THE FABRICATING METHOD OF POLYSILICON, THIN FILM TRANSISTOR, FABRICATING METHOD FOR THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE COMPRISING THE SAME AND FABRICATING METHOD FOR THE SAME

摘要

PURPOSE: A fabricating method of polysilicon, a thin film transistor, fabricating method for the same, organic light emitting diode display device comprising the same and fabricating method for the same are provided to improve the property of a semiconductor layer by minimizing the amount of metal silicide and metallic catalyst within an amorphous silicon layer. CONSTITUTION: In a fabricating method of polysilicon, a thin film transistor, fabricating method for the same, organic light emitting diode display device comprising the same and fabricating method for the same, a buffer layer(110) is formed on a substrate(100). A metal catalytic layer(115) is formed on the buffer layer. The metallic catalyst of the metal catalytic layer is expanded to the buffer layer. The metal catalytic layer is removed. The amorphous silicon layer is formed on the buffer layer. An amorphous silicon layer is hardened to be polycrystalline silicon layer by thermal-processing the substrate.