| 摘要 |
PROBLEM TO BE SOLVED: To perform removal processing of a coating object from a silicon substrate in a short time, and create a high-quality pattern with no outbreak of burrs. SOLUTION: In a state that a silicon substrate 100 is dipped in pure water 200 having no solubility in a photoresist, strong ultrasonic waves are radiated onto the silicon substrate 100 via the pure water 200 from a horn type ultrasonic generator 20, whereby nearly all of metal films and a part of the photoresist can be removed in a short time with no outbreak of the burrs by a principle of metal fatigue, and also an IPA having the solubility in the photoresist is used after the metal films are removed, whereby the remaining photoresist is completely removed. COPYRIGHT: (C)2011,JPO&INPIT |
