发明名称 |
SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF |
摘要 |
The semiconductor substrate provided with a groove portion is irradiated with ions so that an embrittled region is formed in the semiconductor substrate, the semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween and a space which is surrounded by the groove portion in the semiconductor substrate and the base substrate is formed, and heat treatment is performed to separate the semiconductor substrate at the embrittled region, so that the semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween.
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申请公布号 |
US2011124179(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US20100949837 |
申请日期 |
2010.11.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TOKUNAGA HAJIME;OKUNO NAOKI |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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