| 摘要 |
PURPOSE: A method for forming a selective emitter using a doping mask with dopant and a method for manufacturing a solar cell are provided to reduce manufacturing processes and costs by forming the selective emitter through an ion doping and high temperature diffusion. CONSTITUTION: A patterned doping mask(110) is formed on a textured semiconductor substrate. A low density doping region(120) is formed on the surface of the semiconductor substrate without the doping mask by doping ions on the semiconductor substrate. After the low density doping region is formed, a high density doping region(130) is formed by diffusing the dopant on the semiconductor substrate in contact with the doping mask through high temperature diffusion. The doping mask is removed. |
