发明名称 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
摘要 PURPOSE: A semiconductor device and a forming method thereof are provided to implement high integration by including core contacts with the same width and pitch as cell contacts. CONSTITUTION: Active regions(ACT) are formed in a cell region and a core region. An interlayer insulation layer covers the active regions. The cell contacts pass through the interlayer insulation layer and are electrically connected to the active region of the cell region in a first direction. Core contacts(CoC) pass through the interlayer insulation layer and are arranged on the active region of the core region in the first direction. The core contacts includes an upper connection core contact and a dummy contact(DmC). The upper connection core contact is electrically connected to the active regions. The dummy contact is insulated from the active region in one side of the upper connection contact.
申请公布号 KR20110055180(A) 申请公布日期 2011.05.25
申请号 KR20090112098 申请日期 2009.11.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YOON MOON;SIM, JAE HWANG;PARK, SE YOUNG;KIM, KEON SOO;LEE, JAE HAN;SEONG, SEUNG WON
分类号 H01L27/10 主分类号 H01L27/10
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