INSB-BASED SWITCHING DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: An InSb based switching device and a manufacturing method thereof are provided to increase degree of freedom in a design by selecting the direction of magnetic conduction variation according to the variation of a magnetic field and an applied voltage in a single device. CONSTITUTION: A switching device includes a p type semiconductor(65) and an n type semiconductor(64). The p type semiconductor operates to form a first hall electric field in another direction when a magnetic field is vertically or horizontally applied. An n type semiconductor suppresses the first hall electric field by forming a second hall electric field in another direction according to the magnetic filed applied in the same direction as the p type semiconductor.