发明名称 Semiconductor substrate to be cut with treated and minute cavity region, and method of cutting such substrate
摘要 It is an object to provide a semiconductor (1) to be cut. The laser beam machining method irradiates laser light (L) while positioning a focus point (F) at the inside of a semiconductor (1) to thereby form a treated area (7) based on multiphoton absorption along a planned cutting line of the semiconductor (1) inside the semiconductor (1) and also form a minute cavity (8) at a predetermined position corresponding to the treated area (7) in the semiconductor (1).
申请公布号 EP2324950(A1) 申请公布日期 2011.05.25
申请号 EP20110001001 申请日期 2004.07.16
申请人 HAMAMATSU PHOTONICS K.K. 发明人 FUKUMITSU, KENSHI
分类号 B23K26/36;B23K26/03;B23K26/40;B28D1/22;B28D5/00;H01L21/301 主分类号 B23K26/36
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