发明名称 |
Semiconductor substrate to be cut with treated and minute cavity region, and method of cutting such substrate |
摘要 |
It is an object to provide a semiconductor (1) to be cut. The laser beam machining method irradiates laser light (L) while positioning a focus point (F) at the inside of a semiconductor (1) to thereby form a treated area (7) based on multiphoton absorption along a planned cutting line of the semiconductor (1) inside the semiconductor (1) and also form a minute cavity (8) at a predetermined position corresponding to the treated area (7) in the semiconductor (1). |
申请公布号 |
EP2324950(A1) |
申请公布日期 |
2011.05.25 |
申请号 |
EP20110001001 |
申请日期 |
2004.07.16 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
FUKUMITSU, KENSHI |
分类号 |
B23K26/36;B23K26/03;B23K26/40;B28D1/22;B28D5/00;H01L21/301 |
主分类号 |
B23K26/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|