| 发明名称 |
INSULATING FILM MATERIAL, METHOD FOR FORMING FILM BY USING THE INSULATING FILM MATERIAL, AND INSULATING FILM |
| 摘要 |
An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film; (in the formula, m and n represent integer of 3 to 6, and m and n may be the same or different from each other in a molecule.) |
| 申请公布号 |
KR20110055643(A) |
申请公布日期 |
2011.05.25 |
| 申请号 |
KR20117005949 |
申请日期 |
2009.09.01 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE;TAIYO NIPPON SANSO CORPORATION |
发明人 |
OHNO TAKAHISA;TAJIMA NOBUO;INAISHI YOSHIAKI;SHINRIKI MANABU;MIYAZAWA KAZUHIRO |
| 分类号 |
H01L21/312;C23C16/42 |
主分类号 |
H01L21/312 |
| 代理机构 |
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| 主权项 |
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