| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof are provided to form a silicon nitride layer functioning as a hydrophobic layer between an electrode film and an insulating film, thereby preventing the internal structure of a laminate due to the surface tension of an etchant. CONSTITUTION: Insulating films(22) are arranged between electrode films(21). The electrode films and the insulating films are alternatively laminated on a laminated. A hydrophobic layer(23) is arranged between the electrode films and the insulating films. A silicon oxide film is arranged on the laminate. A penetration hole(30) is formed in the laminate, the silicon oxide film, and a control electrode(27). |
