SILICON NITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE

摘要

A process for producing a silicon nitride film having a hydrogen concentration of 9.9 × 1020 atoms/cm3 or less, which comprises carrying out plasma CVD by employing a plasma CVD device in which a microwave is introduced into a treatment vessel with a planar antenna having multiple pores thereon to produce a plasma and by using a film-forming raw material gas comprising an SiCl4 gas and an oxygen-containing gas, wherein the pressure in the treatment vessel is set to 0.1 to 6.7 Pa inclusive.