| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device is provided to prevent a malfunction of recording and erasing data in a set/reset operation by increasing a current limit effect. CONSTITUTION: In a nonvolatile semiconductor memory device, a column control circuit(2) erase, input, and read out data. A row control circuit(3) selects a word line WL. The row control circuit supplies voltage required for erasing, inputting, and reading data. A data output buffer(4) collects input data and an erase command, and it also outputs read out data and collects address data and command data. A pulse generator(9) is controlled by a state machine(7). A data write / erase circuit has a first current limit circuit. The first current limit circuit limits the current flowing in a wire which is installed in a cathode.
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