| 摘要 |
A photovoltaic device capable of improving an output characteristic is obtained. This photovoltaic device includes a first conductivity type crystalline silicon region (1), a second conductivity type first noncrystalline silicon layer (2b) and a substantially intrinsic second noncrystalline silicon layer (2a) arranged between the crystalline silicon region and the first noncrystalline silicon layer, and the crystalline silicon region has an aperiodic corrugated shape having a height of not more than 2 nm on the interface between the same and the second noncrystalline silicon layer. |
