| 摘要 |
<p>In a photoelectric conversion device comprising a photoelectric-conversion section (41) and a peripheral circuit section (42) where signals sent from the photoelectric-conversion section are processed, the both sections being provided on the same semiconductor substrate (21), a semiconductor compound layer (30) of a high-melting point metal is provided on the source (32) and drain (33) and a gate electrode (31) of an MOS transistor that forms the peripheral circuit section, and the top surface of a semiconductor diffusion layer (14) that serves as a light-receiving part (1) of the photoelectric conversion section is in contact with an insulating layer (29).</p> |
