UV PHOTOCELL WITH SCHOTTKY BARRIR

摘要

The invention relates to ultra-violet sensitive semiconductor photocells. UV photocell with Schottky barrier is manufactured based on zinc selenide (ZnSe) with a semitransparent barrier metal layer on the face side of (ZnSe)-substrate and an indium layer on the back side, and a supplementary layer. The supplementary layer is formed from zinc oxide1⋅10-2⋅10thickness on the face of the substrate and on its butt-ends under the semitransparent barrier metal layer, on which contact indium layer having 0.05-0.2 width is deposited. The semitransparent barrier metal layer is made of nickel and gold, or platinum with thickness no more than 1⋅ 10-5 mm. The intention provides extension of dynamic range and increase of sensitivity of ultraviolet-sensitive photocells.