发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to improve performance characteristics by enhancing the sensing margin of a sensing amp. CONSTITUTION: In a semiconductor memory device, a sense amp drive controller includes a first driving controller and a second driving controller. A connection part interlinks a first bit line and a second bit line. A connection controller generates a connect signal which activates the connection part. The connection controller includes a signal input unit and a level shifter(520). A signal input unit generates an internal signal. The level shifter shifts the level of the internal signal and outputs the connection signal.
申请公布号 KR101036926(B1) 申请公布日期 2011.05.25
申请号 KR20090134566 申请日期 2009.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, TAE SIK;LEE, KANG SEOL
分类号 G11C7/06;G11C7/12 主分类号 G11C7/06
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