发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to improve performance characteristics by enhancing the sensing margin of a sensing amp. CONSTITUTION: In a semiconductor memory device, a sense amp drive controller includes a first driving controller and a second driving controller. A connection part interlinks a first bit line and a second bit line. A connection controller generates a connect signal which activates the connection part. The connection controller includes a signal input unit and a level shifter(520). A signal input unit generates an internal signal. The level shifter shifts the level of the internal signal and outputs the connection signal.
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申请公布号 |
KR101036926(B1) |
申请公布日期 |
2011.05.25 |
申请号 |
KR20090134566 |
申请日期 |
2009.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YUN, TAE SIK;LEE, KANG SEOL |
分类号 |
G11C7/06;G11C7/12 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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