| 摘要 |
<p>Photocatalyst comprises: 70-99.998 wt.% of at least one semiconductor material-A having a band gap of at least 3 eV; 0.001-20 wt.% of at least one semiconductor material-B having a band gap of = 3 eV; and 0.0001-5.0 wt.% of at least one additive-C. Independent claims are included for: (1) producing the photocatalyst, comprising (a) impregnating the semiconductor material-A and/or the semiconductor material-A with a solution or a dispersion containing the additive-C or its precursor compound, (b) optionally transferring the precursor compound of the additive-C into the additive-C on the semiconductor material-A and/or semiconductor material-B, to obtain a material, which contains at least one additive-C, (c) optionally drying the obtained materials, (d) optionally mixing the materials of (a), (b) or (c) with the semiconductor material-A or -B, to obtain the photocatalyst, and (e) optionally calcining the obtained photocatalyst; and (2) treating a flow comprising contacting the flow to be treated with the photocatalyst under the influence of light.</p> |
