发明名称 Rectification of high voltages at high frequencies
摘要 <p>1,026,900. Rectifying. SIEMENS-SCHUCKERTWERKE A.G. March 25, 1965 [March 25, 1964], No. 12798/65. Heading H2F. A rectifying arrangement for supplying E.H.T. to a cathode-ray tube comprises a voltage source of more than 5 Kv at a frequency higher than 10 kc/s. feeding a rectifier element comprising a stack of selenium rectifier tablets, each of which has an active rectifying area which is between <SP>1</SP>/ 4 and <SP>1</SP>/ 100 of the total area of one of its major faces. As shown, each element has an aluminium electrode 16, a selenium layer 17, an insulating layer 18 of paper or lacquer with a central hole 18<SP>1</SP>, and an electrode 19 which projects through the hole to make contact with the layer 17. The rectifying area is limited to the area of the hole. The tablets are mounted in a tube 11, are held by spring 14 and are connected with terminals 13. The arrangement is concerned with minimizing the effect of the non-linear voltage distribution along the stack.</p>
申请公布号 GB1026900(A) 申请公布日期 1966.04.20
申请号 GB19650012798 申请日期 1965.03.25
申请人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT 发明人
分类号 H01L25/07;H02M7/10;H04N3/18;H04N5/68 主分类号 H01L25/07
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