| 摘要 |
PURPOSE: A film forming device and film forming method are provided to suppress an unnecessary decomposition reaction of a source gas, thereby forming a SiC film with good quality. CONSTITUTION: A first gas supply path(140) and a second gas supply path(141) are connected onto a chamber(102). A rectifying plate(135) is located in the chamber. The first gas supply path supplies a first reaction gas(131) including a silicon source gas in a film forming chamber. The second gas supply path supplies a second reaction gas(132) including a carbon source gas in the film forming chamber. A SiC film is formed on a substrate(101) arranged in the film forming chamber using the first and second reaction gases.
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