发明名称 |
THIN FILM DEPOSITION APPARATUS |
摘要 |
PURPOSE: An apparatus for depositing a thin film is provided to improve efficiency by implementing both an atomic layer depositing method and a chemical vapor depositing method. CONSTITUTION: A chamber includes a space for depositing a substrate. A susceptor is rotatably installed on the space of the chamber. A raw gas sprayer(200a-200d) has N valves which control gas supplied to each gas supply pipe. A plurality of purge gas sprayers(101-104) are connected to the purge gas supply pipe in which a purge valve is installed. The controller controls the N valves and purge valves to deposit a thin film on the substrate with CVD(Chemical Vapor Deposition) or ALD(Atomic Layer Deposition). |
申请公布号 |
KR20110054829(A) |
申请公布日期 |
2011.05.25 |
申请号 |
KR20090111618 |
申请日期 |
2009.11.18 |
申请人 |
ATTO CO., LTD. |
发明人 |
HAN, CHANG HEE;LEE, KI HOON;CHO, BYUNG CHUL |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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