发明名称 THIN FILM DEPOSITION APPARATUS
摘要 PURPOSE: An apparatus for depositing a thin film is provided to improve efficiency by implementing both an atomic layer depositing method and a chemical vapor depositing method. CONSTITUTION: A chamber includes a space for depositing a substrate. A susceptor is rotatably installed on the space of the chamber. A raw gas sprayer(200a-200d) has N valves which control gas supplied to each gas supply pipe. A plurality of purge gas sprayers(101-104) are connected to the purge gas supply pipe in which a purge valve is installed. The controller controls the N valves and purge valves to deposit a thin film on the substrate with CVD(Chemical Vapor Deposition) or ALD(Atomic Layer Deposition).
申请公布号 KR20110054829(A) 申请公布日期 2011.05.25
申请号 KR20090111618 申请日期 2009.11.18
申请人 ATTO CO., LTD. 发明人 HAN, CHANG HEE;LEE, KI HOON;CHO, BYUNG CHUL
分类号 H01L21/205 主分类号 H01L21/205
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